unisonic technologies co., ltd UTT80N05 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-695.a 80a, 50v n-channel power mosfet ? description the utc UTT80N05 is an n-channel enhancement mode power mosfet using utc?s advanced tech nology to provide customers with a minimum on-state resistance, superior switching performance and low gate charge. the utc UTT80N05 is suitable for switching regulators, dc linear mode control, automotive syst ems, solenoid & motor control, etc. ? features * r ds(on) = 5.1m ? @ v gs =10v, i d =80a * high switching speed ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UTT80N05l-ta3-t UTT80N05g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
UTT80N05 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-695.a ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage (note 2) v dss 50 v gate-source voltage v gss 20 v drain current continuous (t c <135c, v gs =10v) i d 80 a pulsed i dm 320 a single pulsed avalanche energy (note 3) e as 860 mj power dissipation p d 312 w derate above 25c 2.5 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those valu es beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. starting t j =25~150c 3. starting t j =25c , l = 0.42mh, i as = 64a ? thermal data parameter symbol ratings unit junction to ambient ja 62 c/w junction to case jc 0.4 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 50 v drain-source leakage current i dss v ds =50v, v gs =0v 1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2 2.8 4 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =80a 5.1 7 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 3565 pf output capacitance c oss 1310 pf reverse transfer capacitance c rss 395 pf switching parameters total gate charge at 20v q g v dd =30v, i d =80a, r l =0.4 ? 207 269 nc gate to source charge q gs 17.2 nc gate to drain charge q gd 52 nc turn-on delay time t d ( on ) v dd =30v, i d =80a, r l =0.4 ? , v gs =10v, r gs =2.5 ? 12 ns rise time t r 34 ns turn-off delay time t d ( off ) 37 ns fall-time t f 23 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i sd =80a 0.9 1.25 v
UTT80N05 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-695.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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